| 发明名称 |
Semiconductor Device Comprising Electrostatic Discharge Protection Structure |
| 摘要 |
A semiconductor device includes a semiconductor body having first and second opposing surfaces, a first isolation layer on the first surface of the semiconductor body, and an electrostatic discharge protection structure. The electrostatic discharge protection structure includes a diode structure on the first isolation layer, a first terminal and a second terminal. The diode structure includes a polysilicon layer having first regions and at least one second region of opposite conductivity type alternatingly arranged along a first lateral direction between the first terminal and the second terminal. The diode structure extends from an electrostatic discharge protection part into an edge termination part along a second lateral direction. A first breakdown voltage associated with the diode structure in the electrostatic discharge protection part is smaller than a second breakdown voltage associated with the diode structure in the edge termination part. |
| 申请公布号 |
US2016351557(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201615167141 |
申请日期 |
2016.05.27 |
| 申请人 |
Infineon Technologies Dresden GmbH |
发明人 |
Weyers Joachim |
| 分类号 |
H01L27/02;H01L23/367;H01L29/06;H01L29/78;H01L29/10 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor body having a first surface and a second surface opposite to the first surface; a first isolation layer on the first surface of the semiconductor body; and an electrostatic discharge protection structure comprising a diode structure on the first isolation layer, the electrostatic discharge protection structure including a first terminal and a second terminal, wherein the diode structure comprises a polysilicon layer having first regions and at least one second region of opposite conductivity type alternatingly arranged along a first lateral direction between the first terminal and the second terminal, wherein the diode structure extends from an electrostatic discharge protection part into an edge termination part along a second lateral direction, and wherein a first breakdown voltage associated with the diode structure in the electrostatic discharge protection part is smaller than a second breakdown voltage associated with the diode structure in the edge termination part. |
| 地址 |
Dresden DE |
