| 摘要 |
PURPOSE:To make it possible to perform a uniform doping on the side wall of a trench groove by a method wherein an impurity doping met hod is used in a depressed atmosphere. CONSTITUTION:A quartz boat 8, on which a sheet each of an As solid diffusion source 6 of the shape same as the wafer containing AlAsO4 and an Si wafer 7 which is arranged on both sides of the solid diffusion source are arranged, is inserted into a quartz tube 5. The mixed gas of nitrogen and oxygen is used as atmospheric gas. The tube 5 is brought into a depressed atmosphere 9, and the inside of the tube 5 is heated up to the prescribed temperature by a heater 10. At this time, as the average free path of a molecule becomes 5mum or thereabout, for example, the quantity of impurity atoms arrived at the bottom face of the trench groove of 5mum is same as that arrived at the surface, and a doping layer 3 can be formed uniformly on the side wall 2 of the groove irrespective of the depth of the groove.
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