Semiconductor laser device

摘要

A semiconductor laser device which includes a first conductivity type semiconductor substrate; a first conductivity type first cladding layer, an active layer, and a second conductivity type second cladding layer successively provided on the substrate, wherein both the cladding layers have energy band gaps larger than that of the active layer; a first conductivity type current blocking layer having an energy band gap larger than that of the second cladding layer being provided on the second cladding layer, having a groove removed therefrom so as to form an exposed stripe portion on the second cladding layer; and a second conductivity type third cladding layer having an energy band gap smaller than that of the current blocking layer and larger than that of the active layer formed on the current blocking layer and on the stripe portion.