| 摘要 |
PURPOSE:To improve the electric reliability and the semiconductor integration of a semiconductor chip in a resin-sealed semiconductor device by composing the surface of a base insulating layer under wirings extended to the corners of the periphery of the chip of an uneven shape. CONSTITUTION:In a resin-sealed semiconductor device, the surface of an interlayer insulating film 2F to become a base insulating film of the lower part of power source wirings 2H (wirings 2Hb for a power source voltage, wirings 2Hc for a reference voltage) extended to the periphery of a semiconductor chip 2 is composed of an uneven shape. The uneven shape of the film 2F is composed of the stepwise shape of the film 2F, i.e., an insulating film 2Bb between a plurality of elements formed on a semiconductor substrate 2A of the lower part of the wirings 2H. Accordingly, the variation of the position of the wirings 2H due to a stress F can be suppressed by the uneven shape to prevent a passivation film 2I from cracking, and itself from damaging due to the variation of the position of the wirings 2H. Thus, the electric reliability and the integration of the chip can be improved.
|
