| 摘要 |
PURPOSE:To shorten an access cycle by using a charge drawing-out circuit which dropping the potential of a word line released from its selective drive state with no intervention of a word flyback line. CONSTITUTION:A storage device contains a charge drawing-out circuit 2 which drops the potential of a word line WH set right after the line WH is released from its selective drive state down to a level set before selection. Then the circuit 2 is connected to the line WH and the residual charge of thee line WH is drawn out directly from the side of the line WH especially its drive circuit with no intervention of a word flyback line WL. Therefore, the charge is drawn out of the line WH intensively and with no disturbance of a memory cell M until the potential of the line WH is lowered enough. Thus the potential of the line WH released from its selective driving state is turned into a sure non- selection state in a short time. Then an access cycle is shortened.
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