发明名称 SEMICONDUCTIVE PRESSURE SENSOR
摘要 PURPOSE:To achieve miniaturization, to simplify an assembling structure and to attain cost reduction, by forming a pressure sensor element part by integrally bonding a diaphragm element and a base stand having coefficient of thermal expansion almost equal to that of the semiconductive material constituting said diaphragm element. CONSTITUTION:A silicon diaphragm element 4 forms a pressure sensor element part by the integral bonding with a base stand 5 composed of borosilicate glass having coefficient of thermal expansion almost equal to that of the semiconductive material constituting said element 4. The pressure sensor element part is assembled in a housing 2 in an unfixed or non-contact state through an elastic member such as a clip 8. The electrodes 6A, 6B on the diaphragm element 4 are directly bonded to output terminals 3A, 3B under pressure by the clip 8. As mentioned above, since a structure such that the pressure sensor element part is not perfectly fixed in the housing 2 is not employed, the effect of external stress can be also reduced.
申请公布号 JPS63177030(A) 申请公布日期 1988.07.21
申请号 JP19870008129 申请日期 1987.01.19
申请人 NIPPON DENSO CO LTD 发明人 MATSUDA NORIO
分类号 G01L9/04 主分类号 G01L9/04
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