| 摘要 |
PURPOSE:To perform collectively ion beam exposure by irradiating of hydrogen or helium and the like with electron beams emitted from a figurelike cesium film and by causing ionized ions to be converged, thereby irradiating the surface of a substance to be exposed with such ions. CONSTITUTION:A film of a resist 2 is formed at the surface of a silicon wafer 1 and then a substance to be exposed is formed. A mask what is called where, facing the surface of the substance to be exposed, a Cs film 4 is formed at a glass mask 3 in the form of a figure is installed. And electrons 7 excited from the Cs film 4 is discharged by irradiating the rear side of the glass mask 3 with ultraviolet rays 5. A hydrogen gas introduced in a vacuum atmosphere is excited by the electrons and a hydrogen ion, that is, proton 8 is formed. Protons 8 are accelerated and simultaneously are converged by a magnetic lens 6 and the surface of a substance to be exposed is under exposure of ion beams.
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