| 摘要 |
PURPOSE:To form a high purity thin film by dissociating high purity thin film material gas containing an element which forms the thin film or a gas solidified layer with a strong laser beam to form a plasma, and irradiating a substrate with the plasma generated at its local place. CONSTITUTION:Gas containing as at least part of a component element an element which forms a desired thin film or its gas condensed and solidified layer is irradiated with a high output laser beam 2 to generate a plasma locally in the gas, and a substrate 10 is irradiated with active particles generated in the plasma 12 to form a thin film. For example, an Si substrate 10 is disposed in a vacuum vessel 5, the temperature of the substrate 10 is held at 400 deg.C by a heater 11, and GeH4 gas is introduced from a gas cylinder 6 through a pressure reduction valve 7 and a gas flowrate control valve 8 into the vessel 5. The laser beam 2 of a pulse oscillation large output KrF excimer laser 1 is condensed by a convex lens 3 made of melted quartz to be incident into the vessel 5 to generate the laser plasma 12 of the GeH4 gas, thereby forming a Ge thin film on the substrate 10.
|
