| 摘要 |
PURPOSE:To improve the isolation by using a FET in which gates connected in series are placed between a source and a drain of a comb-like structure, and the distance between the source and the drain in the inactive region is made larger than the distance between the source and the drain in the active region, thereby reducing the capacitance component generated between the source and the drain. CONSTITUTION:A FET is used in which gates 1 connected in series are placed between a source 2 and a drain of a comb-like structure, and the distance Sp between the source and the drain in the inactive region is made large relative to the distance Sn between the source and the drain in the active region. For instance, FET's as described above are connected as shown to construct a microwave switch circuit, and a microwave signal inputted to an input terminal 9 is switched to either output terminal 10 or 11 by providing respectively inverted DC control voltages to the gate 1 of the FET's 12, 15 and to the gate 1 of the FET's 13, 14.
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