| 摘要 |
PURPOSE:To obtain a crystalline layer proper for forming a device not doped in high concentration by shaping the crystalline layer in low-concentration doping onto an L-SPE layer in high-concentration doping formed onto an insulating film shaped onto a substrate. CONSTITUTION:When an Si film 13 is formed to the surface of an Si substrate 11 to which an silicon oxide (SiO2) film 12 (pattern) is shaped, the formed film is changed into polycrystalline Si on the SiO2 film 12 and into single crystal Si in other sections. Si ions are implanted to the film and the film is brought to an amorphous state, and an impurity is doped to the film. When the Si substrate 11 is lateral solid-phase epitaxy (L-SPE)-grown through heat treatment, a single crystal Si film 13a is acquired, and a position where separate from the end of the SiO2 film 12 at a distance larger than the film 13a is turned into a polycrystalline Si film l3b. When Si is grown onto the substrate in an epitaxial manner, Si evaporated onto said single crystal Si film 13a is converted into a single crystal Si film 14a and Si evaporated onto the polycrystalline Si film 13b into a polycrystalline Si film l4b. Accordingly, an Si layer in low concentration can be shaped onto an Si layer including the impurity in high concentration, thus forming a semiconductor device.
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