| 摘要 |
PURPOSE:To prevent the interconnection from being disconnected and shortcircuited by a method wherein a high melting point metallic film is formed on the bottom and sides of a groove cut in an interlayer insulating film while the high melting point metallic film is selectively grown in the same thickness as that of the interlayer insulating film. CONSTITUTION:After cutting a groove 3 in an insulating film 2 and forming a high melting point metallic film 4 on the insulating film 2, the bottom and sides of groove 3, the high melting point metal 4 is coated with resist 5 until the surface is flattened. Later, the surface is etched at the etching rate of 1 to leave the resist 5 and the high melting point metal 4 in the groove 3 only. Next, after removing the residual resist 5 to expose the high melting point metal film 4, the metallic film 4 is selectively grown to fill the groove 3 with the metal 4. Through these procedures, the interconnection can be flattened to prevent the interconnection from being disconnected and shortcircuited.
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