| 摘要 |
PURPOSE:To enhance the density and the speed of a large scale integrated circuit by eliminating the bonding of a photoresist film directly on a gate oxide film to prevent a contamination from the photoresist film, and an increase in a boundary level density due to the damage of a photoresist film removing ashing. CONSTITUTION:A thin silicon oxide film 31 to become a gate oxide film is formed on the surface of the semiconductor substrate of a semiconductor device, and a first conductive film 32 having reverse polarity to the substrate is adhered onto the film 31 as a lower layer of a gate electrode. The film 32 is coated with a photoresist film 33, and a direct contact is patterned on the film 33. With the pattern as a mask the film 33 is removed, and the films 32, 33 are removed by reactive etching. Further, a thin film silicon oxide film 34 on the substrate is removed, a second conductive film 35 is deposited, and an impurity having reverse polarity to that of the substrate is doped. Then, the steps of forming a silicon oxide film 36, a photoresist 38 and a substrate etching preventing protective film 39 are conducted to form a large scale integrated circuit.
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