| 摘要 |
PURPOSE:To improve a yield by immersing a material single crystal in a corrosive liquid for an etch pit and by removing a lattice defect part of the material single crystal by means of etching. CONSTITUTION:When a crystal substance 2 bonded on a substrate 1 is immersed in a corrosive liquid 3 for an etch pit, a lattice defect part is etched along a dislocation line 4 of the crystal substance 2 and thereby the etch pit 5 is formed. This etch pit 5 extends to the substrate 1. The etching ends in this state. In this way, only the defect part is removed by corrosion, and thus a yield can be improved.
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