| 摘要 |
PURPOSE:To obtain a good transistor characteristic by widely forming a gate electrode layer anticipating an impurity diffusion portion before narrowing the width of the gate electrode layer by that portion after diffusion so that an impurity diffusion may not be formed under the gate electrode layer. CONSTITUTION:Since the patterning width of a resist 4 defining the width of a polycrystal silicon gate film 3 is in advance enlarged, the width of the polysilicon gate film after etching is formed large. After finishing implantation of impurities 5, its side is etched to the width of the polycrystalline silicon gate film 3 by about an increment W of impurity diffusion. Finally, the implanted impurities are diffused by a thermal diffusion method or the like, and since the width of the polycrystal silicon gate film 3 is narrowed by about the portion of impurity diffusion, the impurity diffusion layer 6 is not formed under the polycrystalline silicon gate film. thereby, a good transistor characteristic, in which the impurity diffusion layer does not come under the gate electrode, can be obtained.
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