MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To make it possible to finely form a island of a polycrystalline silicon film on a window without slippage by removing the second silicon oxide film formed on the polycrystalline silicon film leaving the part on the window to expose the polycrystalline silicon film of the window part. CONSTITUTION:A window 9 is formed on the first silicon oxide film 8 of a semiconductor substrate 6 and a polycrystalline silicon film 10 is formed on this surface. The second silicon oxide film 11 is formed thereon and this is removed by dry etching leaving only the part of the window 9 to expose the polysilicon film 10, followed by removing a part of the second silicon oxide film 11 remaining on the window by wet etching. Next, the polycrystalline silicon film 10 exposed to the surface is oxidized to be made into the third silicon oxide film 12 and the remaining second silicon oxide film 11 is removed by wet etching for exposing the polycrystal silicon film 10 of the window part. thereby, the island of the polycrystalline silicon film can be formed on the window formed on the semiconductor substrate surface without slippage.