| 摘要 |
PURPOSE:To prevent disappearance of an alloy wiring by heat treatment, by forming a polysilicon film, then projecting ions so as to make the surface coarse, and forming high-melting-point metal or its silicide film. CONSTITUTION:A polysilicon film 5 is formed on the surface of a silicon oxide film 4. Ions are projected at first time in the direction of seven degrees or more with respect to a plane perpendicular to the horizontal plane of a semiconductor device. Then at least two times of ion projections are performed at the angle of seven degrees or more, with the plane perpendicular to the horizontal plane of the semiconductor device as the center in a plane-symmetry mode. The surface of the polysilicon film 5 at a step part can be made coarse uniformly. Then, a wiring having a double-layer structure of the polysilicon film 5 and a molybdenum silicide film 11 is formed. Thereafter, reacted alloy 9 is formed by high temperature treatment. Adhesion between the polysilicon film 5 and the molybdenum silicide film 11 is improved. In this way, the adhesion between the high-melting-point metal or its silicide film and the polysilicon film is improved, and an excellent alloy wiring can be formed.
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