| 摘要 |
PURPOSE:To constitute easily a variable gain amplifier in a high frequency region by using one chip, and improve the high frequency distortion characteristics by turning a PIN diode into a monolithic type. CONSTITUTION:The title device is a monolithic type tow-stage amplifying circuit in which a PIN diode D1 is used between stages and the gain is controlled. It comprises transistors Q1 and Q2, resistors, capacitors, and the PIN diode D1. The transistor Q1 corresponds with a transistor containing an emitter region 2, a base region 3 and a collector region 4 of high concentration, and the PIN diode D1 corresponds with a PIN diode containing a P-type region 5 and an N-type region 6, and applying a P-type substrate 1 to an I-type region. As the PIN diode is turned into a monolithic type in the above manner, one chip constitution is realized, and the high frequency distortion characteristics is improved.
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