| 摘要 |
PURPOSE:To make it possible to control the generating position of a crystal grain boundary, by a method wherein, when an SOI film is going to be formed into a single crystal, the formation of single crystal is performed using a wavelike seeds in which linear seeds are slantly arranged in the scanning direction of the energy beam, with which a polysilicon film or an amorphous silicon film is fused, is annealed. CONSTITUTION:Seeds 1 and a silicon oxide film 5 are formed by oxidizing the surface of a silicon substrate 4 using a selective oxidizing method, and a polysilicon film 6 and a silicon oxide film cap 7 are deposited using a CVD method. Wavelike seeds is used, and for example, when the plane direction <001> is used on the silicon substrate 4, the seeds having the combination of <110> and <110> orientation is formed, and a recrystallization is conducted using a linear electron beam. The electron beam is scanned in the direction <100> in the case of the seed of combination of <110> and <110>. When a recrystallizing operation is performed under the above-mentioned condition, the solid-liquid interface is formed in the shape as shown in the diagram as 2, and a crystal grain boundary 3 is generated on the part which solidifies last. As a result, the position where the crystal grain boundary is present can be controlled.
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