| 摘要 |
PURPOSE:To make the thickness of an epitaxial crystal uniform by forming the thickness of the solution of a semiconductor material, which is brought into contact with a substrate and shaped under the substrate when a reaction tube is turned, in thicker size at the central section of the substrate than the peripheral section of the substrate. CONSTITUTION:The depth l1 of the solution of a semiconductor material 12 brought into contact with a substrate 11 and positioned at the lower section of the central section of the substrate 11 is made deeper than the depth l2 of the solution of the semiconductor solution 12 in the lower section of the peripheral section of the substrate 11, and the quantity of a solute in the lower section of the unit area of the central section is made larger than that of the solute in the lower section of the unit area of the peripheral section. Consequently, since the quantity of the solute under the unit area of the substrate 11 is made larger than that of the solute under the unit area of the peripheral section even when there is a tendency in which the quantity of diffusion of the solute reaching the peripheral section of the substrate 11 is made larger than that of the solute reaching the central section of the substrate 11, the quantity of diffusion of the solute in the solution under the central section of the substrate and the quantity of diffusion of the solute in the solution under the peripheral section of the substrate are equalized. Accordingly, an epitaxial crystal having uniform thickness and an equal composition is formed onto the substrate.
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