| 摘要 |
PURPOSE:To form oxide films of the same thickness on the bottom surface and the sidewall of a groove, and make it easy to control the characteristics of a semiconductor element formed in the groove, by forming the groove on the basis of an orientation flat formed on a substrate when the groove is made on the silicon substrate surface and therein the semiconductor element is formed. CONSTITUTION:On a silicon substrate 18, a groove is formed, and on the peripheral wall of the groove, an oxide film is stuck. When a semiconductor element is arranged in a part surrounded by the film, it is formed on the basis of an orientation flat wherein a groove is formed on the substrate. In the case of (100) face of a substrate, the orientation flat is formed in the direction of <100>. In the case of (110) it is formed in the direction of <110> or <100>. In the case of (210), it is formed in the direction of <210> or <100>. For example, when the surface of the substrate 18 is a (100) face, a flat 18a is formed on the periphery in the direction of <100>, and a groove 19 is made on the basis of it. Thereby, the bottom surface and the side surfaces of the groove 19 are all the (100) face, and the thickness of an oxide film stuck on these surfaces is made uniform.
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