| 摘要 |
PURPOSE:To arbitrarily setting the wavelength interval and to reduce the number of epitaxial growths by placing on a GaAs substrate a pluraliry of active layers of the AlGaAs, InGaAsP and AlGaInP systems and simultaneously forming a lateral buried layer. CONSTITUTION:On a GaAs substrate 1, an AlGaAs clad layer 2, AlGaAs active layer 3 and AlGaAs clad layer 4 are grown by a liquid phase growth method to a Ga solvent. Part of them is etched away, a p-InGaAsP layer is epitaxially grown by a liquid phase growth method of an In solvent, and an n-InGaP clad layer 5, an InGaAsP active layer 6 and a p-InGaP clad layer 7 are grown. Then a mesa etching is applied in stripes, a p-InGaP buried layer 8 and an n-InGap buried layer 9 are grown, and the individual elements are isolated by isolation etching, thereby making a multiple-wavelength laser wherein arbitrary wavelengths are combined.
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