发明名称 METHOD AND DEVICE FOR FORMING THIN METALLIC FILM
摘要 PURPOSE:To prevent defective vapor deposition and formation of a defective vapor-deposited film by evacuating the inside of a vacuum chamber, preheating the inside of the vacuum chamber before a vapor-phase metal is generated to generate a gas and providing a mechanism for sorbing the gas. CONSTITUTION:When vacuum deposition is carried out, the inside of the vacuum chamber 1 is firstly evacuated to about 1X10<-2>Torr by a rotary pump 4 and then evacuated to about 1X10<-3>Torr by jointly using a mechanical booster pump 3 and a diffusion pump 2. An electric current is applied respectively to the filament 5' in a sorption chamber 9 and to the filament 5 in the vacuum chamber 1 from an electric power source 12 through a current rectifier 11. Consequently, a gas is stripped from the inner wall and a base material 8 in the vacuum chamber 1, and the gas and the remaining gas are sorbed by the sorption metal 6' in the sorption chamber 9 through a porous partition wall 10. When sorption is finished, the vacuum in the vacuum chamber 1 is rapidly increased to 1X10<-4>Torr, and vapor deposition is started at this time. By this method, an excellent thin metallic film can be formed on the base material 8.
申请公布号 JPS63230864(A) 申请公布日期 1988.09.27
申请号 JP19870062733 申请日期 1987.03.19
申请人 NIPPON PETROCHEM CO LTD 发明人 WATANABE MASUKAZU;TAKECHI HARUYUKI
分类号 C23C14/14;C23C14/24 主分类号 C23C14/14
代理机构 代理人
主权项
地址