发明名称 SEMICONDUCTOR PHOTODETECTOR
摘要 PURPOSE:To obtain ultrahigh speed and low noise characteristics resistant against a temperature change by continuously varying the composition of an element component to be added to a magnifying region in a resonance ionization type avalanche photodiode. CONSTITUTION:A magnifying region 13 in which an element component to be added to generate a resonance is continuously varied in a thicknesswise direction is formed in a resonance ionization type avalanche photodiode. That is, the composition of an element component to be added of the magnifying region is so continuously varied in a structure as to present a resonance point in a predetermined temperature range at an ambient temperature as a center. Thus, even if the temperature alters according to an environment, constant high speed and low noise characteristics are obtained.
申请公布号 JPS63232377(A) 申请公布日期 1988.09.28
申请号 JP19870067151 申请日期 1987.03.19
申请人 FUJITSU LTD 发明人 MIKAWA TAKASHI
分类号 H01L31/107;H01L31/10 主分类号 H01L31/107
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