| 摘要 |
PURPOSE:To efficiently form the title functional deposited film having excellent characteristics by producing plasma with the microwave having specified energy, and decomposing the raw gas contg. a specified amt. of gaseous Si2F6 with the plasma under specified pressure. CONSTITUTION:A supporting body is arranged in the deposited film forming device capable of being depressurized, and the raw gas for forming the deposited film such as SiH4 is introduced. Plasma is produced therein by microwave energy to decompose the raw gas, and the functional deposited film of amorphous Si, etc., is formed on the supporting body. In the formation of the deposited film, <=10vol.% gaseous Si2F6 is mixed into the raw gas. The microwave energy of >=1.1 times the microwave energy when the depositing rate is saturated is imparted to the raw gas. Besides, the internal pressure during film deposition is controlled to <=10mTorr. By this method, the generation of polysilane powder due to the polymerization of the raw gas is prevented, and the functional deposited film of a semiconductor alloy, etc., having excellent optical and electrical characteristics and capable of being widely used is efficiently and stably formed. |
