| 摘要 |
PURPOSE:To integrate growing crystal on a substrate with high abrasion resistance and to obtain characteristics equivalent to that of monocrystal by utilizing a phenomenon that the nucleus forming density of crystal allowed to grow is changed in accordance with a material used for a substrate allowing the crystal to grow. CONSTITUTION:The crystal is formed by a material having sufficiently larger nucleus forming density as compared to a material 15 forming a crystal forming face is formed on the crystal forming face on the substrate 14. A nucleus forming face 17 having a fine area sufficient for the crystal growth of only a single crystal is formed and a circuit formed by using a semiconductor crystal 18 planely formed made to grow on the nucleus forming face 17 is electrically connected to a thin film magnetic head 15 formed on the substrate 14. Thus, a monocrystal layer 18 capable of forming a required element is formed on the thin film 15 by flattening the monocrystal grains 17 by means of the selec tive growth of the crystal. Since the thin film 15 to be a material for a stacking face is formed on the substrate 14, an optional material can be used for the substrate 14 to be a supporting body, so that the monocrystal layer can be easily formed on the material having sufficient abrasion resistance. |
