| 摘要 |
PURPOSE:To make it possible to perform high concentration planar doping of an arbitrary atomic layer in a highly precise manner with group VI elements as impurities by a method wherein the title semiconductor is constructed in such a manner that one or more layers of the III-V compound semiconductor, having a part of the lattice point to be occupied by a group V element replaced by group VI elements, is contained therein and that the property as a semiconductor is maintained as a whole. CONSTITUTION:A structure, containing one or more layers of III-V compound semiconductor layer wherein a part of lattice point is replaced with a VI group element maintaining the property of III-V compound semiconductor as a whole, is formed. Besides, when said III-V compound semiconductor device is formed, the chloride of a group III element and a group V element, or the hydrogen compound of VI-group element are supplied alternately, and the desired structure is formed. Using the method of formation as above-mentioned, the place where plate doping will be performed in the preciseness of single atom in monomolecular weight can be arbitrary determined, and a high concentration doping of the above-mentioned layer with a group V element can be accomplished in a highly efficient manner.
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