SEMICONDUCTOR PROCESSOR

摘要

PURPOSE:To augment the intensity of ultraviolet rays near 185 nm by controlling the temperature of thermostat provided at least one position of a bulb within the range of 40-80 deg.C. CONSTITUTION:A lamp for ultraviolet ray source comprising a bulb 9 for light source sealed with mercury is provided to irradiate the reaction chamber of semiconductor device with the ultraviolet rays; a thermostat 20 is provided on at least one position of the bulb 9 to control the mercury vapor pressure inside the bulb 9 by controlling the temperature of thermostat 29 within the range of 40-80 deg.C; the lamp is impressed with high-frequency power to emit ultraviolet rays for irradiating the reactive gas led into the reaction chamber with the ultraviolet rays from the source 8 for activating or exciting the reactive gas. In other words, the excitation probability of mercury atoms can be enhanced to augment the light emission near 185 nm by using high-frequency power.