| 摘要 |
PURPOSE:To stably operate a constant voltage static CMOS/RAM even when a power source voltage is low, by performing pre-charge while a word line is closed. CONSTITUTION:When a pre-charge signal phic changes from an L to an H, the change of the signal is transferred from a NOR gate G1 to a G gate via a pseudo decoder DD and a pseudo memory cell DM, and an internal pre-charge signal phic' changes from the L to the H. At this time, the word line which drives the memory cell DM becomes active with a little delay due to a the delay time at the decoder DD. Next. when the signal phic changes from the H to the L, the two-input NOR gate G is set an state, however, the signal phic' does not change immediately, and a state is set the one waiting for an input on the side. In other words, the signal phic' changes after the word line changes from the H to the L. In such a way, the pre-charge can be performed while the word line is closed.
|
