| 摘要 |
PURPOSE:To reduce device cost and prevent contamination of crystal raw material melt, by dividedly constituting structural members of a sintered material of aluminum nitride and carbon coated with thermally decomposed boron nitride according to the difference in temperature rise in operation in a device for producing a compound semiconductor single crystal. CONSTITUTION:This device is mainly constituted of a high-pressure vessel 1, a crucible 2 placed therein, a crucible pedestal 3 for holding the crucible 2, a crucible cover 4 for protecting the crucible 2 placed along the side peripheral surface of the crucible 2, a heater 5 placed coaxially with the crucible 2 on the outside of the crucible cover 4, heat shielding plates (11a), (11b) and 12 placed on the outside of the heater 5 and a crystal pulling up shaft 8 liftably placed above the crucible 2. The following constitutions are then added. That is furnace members adjacent to the heater 5 are formed of a sintered aluminum nitride material in the crucible pedestal 3, crucible cover 4 and heat shielding plates (11a) and (11b). Furnace members other than those adjacent to the heater 5 are formed of carbon coated with thermally decomposed boron nitride.
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