| 摘要 |
1) forming windows for p+ isolation (4'), base (5'), and collector contact (7') regions simultaneously; 2) forming p+ window only after coating photo resistor (9"); 3) implantation of boron ion to penetrate the p+ region through epitaxial layer (3'); 4) forming base region (5') by implantation of boron ion; 5) forming collector contact (7') and emitter (6') regions by masking and etching processes; 6) forming windows for contacts of emitter, collector, and base after annealing with temp. of 900-1000≦̸C; 7) forming electrodes by coating Al layer.
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