| 摘要 |
PURPOSE:To protect the lower region of a first layer from damage by a method wherein the first and second layers are formed at the bottom and on the side walls of a contact hole. CONSTITUTION:A contact hole 5 is provided in a silicon oxide film 7 formed on a semiconductor substrate 6, so deep as to reach the semiconductor substrate 6. In a following process a layer 8 is deposited over the entire surface, made of Al or Al-Si or Al-Si-Cu. A layer 9 is next deposited on the entire surface of the layer 8, made of molybdenum silicide. A process follows wherein a resist material 10 is applied into the contact hole 5. Etching is accomplished for the molybdenum silicide to be removed except from inside the hole 5, at a rate enabling both the resist material 10 and molybdenum silicide to be equally affected. Next, the resist material 10 retained in the contact hole 5 is removed, Al-Si for a wiring 4 is deposited, whereon a pattern is formed of a resist material 11. Finally, the Al-Si is locally etched away for the completion of the wiring 4, after which the resist material 11 is removed. In this way, a wiring pattern may be properly designed without a margin for a contact of a contact section 3 and the wiring 4.
|
