发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To reduce the interference noise between bit lines due to the coupling capacity between bit lines by certainly providing a pair of bit lines in the floating state between a pair of activated bit lines. CONSTITUTION:An input/output line and the input/output contact of a sense amplifier are connected by MOS transistor TRs Q3 and Q4 which connect a select control signal phiY to a gate. Respective pairs of bit lines are in the holder bit line system but are adjacent to one another, and one pair of bit lines are in the floating state of high level at the time of activating the other pair because of a shared sense amplifier. With respect to pairs of adjacent bit lines different in sense amplifier, a pair of bit lines in the floating state are arranged between a pair of activated bit lines similarly. Thus, the interference between the pair of activated bit lines is very reduced, and the coupling capacity between the pair of activated bit lines is reduced.
申请公布号 JPS63249998(A) 申请公布日期 1988.10.17
申请号 JP19870085061 申请日期 1987.04.06
申请人 NEC CORP 发明人 HANNAI SEIICHI
分类号 G11C11/401;G11C11/34 主分类号 G11C11/401
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