| 摘要 |
PURPOSE:To simplify a manufacturing process, by a method wherein a first impurity diffusion region of low concentration having a shallow junction depth is formed, by applying a heat treatment to the residual part of a glass film on a gate electrode to make the part flow, and making the impurity contained in the flowed glass film diffuse thermally into a source and drain region. CONSTITUTION:The residual part of a phosphosilicate glass film 16a on the residual part of a polysilicon film 15a is softened by applying a heat treatment, and made to flow from the periphery of the residual part of the polysilicon film 15a. Phosphorus (P) as N-type impurity contained in the flowed residual part of the phosphosilicate glass film 16a is thermally diffused in the adjacent part to a laminated body 17 as the formation region of source and drain, and N-type first impurity diffusion layers 18, 18 having a shallow junction depth are formed. Thereby, manufacturing processes requiring cost and manhour such as the followings can be eliminated; i.e. the formation of the first impurity diffusion region 18 by ion implantation, and the patterning of a CVD oxide film by reactive ion etching to form a second impurity diffusion region 20.
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