| 摘要 |
PURPOSE:To perform multilayer interconnections by adding metal oxide to the partial region of a thin superconducting film on a substrate as an insulating region to form an insulator of the side periphery of the material, thereby forming the upper surfaces of the regions substantially at the same level. CONSTITUTION:An oxide superconducting material 2 is formed on a substrate 1, the upper surface is selectively coated with a photoresist 3, and aluminum is, for example, added by an ion implanting method 4 to regions 5, 5' not formed with the resist 3. Then, when the whole is again heated and baked in an oxidative atmosphere, the resist 3 is removed, an ion implanted isolation region 11 continuously holds insulative even in later high temperature treating steps, and a superconducting region 10 also holds a superconducting state. Thus, the isolation region having substantially the same height as that of the upper surface of the oxide superconductor can be provided adjacently to perform integrated multilayer interconnections, thereby integrating a superconducting element. |
