| 摘要 |
PURPOSE:To improve the electric characteristics of an island type semiconductor device by forming a thick oxidized film by thermal oxidation on the side of island type silicon film on a substrate, growing a nitrided film on the overall surface by a growing method having large creeping and burying the gap between the substrate and the oxidized film with nitrided film. CONSTITUTION:When a silicon oxidized film 23, a nitrided film 24 and a silicon oxidized film 25 are accumulated on a silicon film 22 on a sapphire substrate 21 and are then anisotropically etched, sides 26 become oblique. When the film 25 is removed, the gate oxidized film 27 of the side is thermally oxidized and 3000Angstrom of film is formed, a gap is produced between the film and the substrate. When the film 24 is removed and a nitrided film 28 is grown by a growing method having larger creeping so as to eliminate the parastic capacity caused by the gap, nitrided film 28' is crept into the gap 28', and is thus retained even if the film 28 is removed. Thus, the electric characteristics can be improved, and an IGFET adapted for high speed operation can be obtained. |
