FORMATION OF THIN FILM PATTERN

摘要

PURPOSE:To prevent the occurrence of breaking of the source wiring and the like by forming a thin film on a light transmission substrate containing silicon oxide as a component with an internal stress not larger than a constant tensile stress. CONSTITUTION:A thin film 8 is formed on a light transmission substrate 6 containing silicon oxide as a component so that the product of the internal tensile stress and the thickness becomes 1X10<5>dyn/cm or less, and the thin film 8 is exposed to an etchant containing hydrofluoric acid thereby to form a pattern. Accordingly, the damage to the glass or quartz substrate is controlled. With this, even if the substrate 6 is exposed to an etchant of the hydrofluoric acid system, no hole occurs and no breaking of the wiring to be formed in the substrate occurs.