| 摘要 |
PURPOSE:To form an emitter, a base electrode, and an emitter electrode self- matchedly by a method wherein an insulating film, which serves as a mask for forming an emitter, is formed so as to serve as a part of a mask for the formation of an electrode metal on a semiconductor layer of a base region and an emitter electrode metal is formed on an emitter mesa through a covering material serving as a mask. CONSTITUTION:A semiconductor layer 2 of a collector region, a semiconductor layer 3 of a base region, and a semiconductor 4 of an emitter region are formed on a semiconductor substrate 1 successively and thereafter an insulating film 9 to be used as a mask for the formation of an emitter mesa later is formed on the semiconductor layer of the emitter region. A base electrode metal 6 is formed on the semiconductor layer 3 of the base region and a covering material 7 is so built thereon as to render the surface flat. An emitter electrode metal 8 is formed on the emitter mesa through the covering material 7 serving as a mask and the disused emitter electrode metal 8 is removed by means of removal of the covering material 7. By these processes, a base and an emitter electrode are formed self-matched to the emitter mesa.
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