| 摘要 |
PURPOSE:To manufacture cells of the same structure having different characteristics by again diffusing a specific diffused section of a specific sell of a plurality of semiconductor cells. CONSTITUTION:A phosphorus (arsenic) PSG film 8, a boron silicate glass film 6 and an SiO2 film 5 in the emitter region of a specific N-P-N transistor Tr are removed in a second emitter patterning step through an emitter patterning step, a vapor growth and emitter diffusing steps. A whole wafer face is formed with a phosphorus (arsenic) silicate glass film 11. Then, phosphorus and arsenic are thermally diffused in the patterned emitter section to form an N<++> layer 10. Thus, the current amplification factor hFE of the right side N-P-N Tr can be increased than that of a left side Tr. As a result, the Trs having the same cell structure and different characteristics can be contained in an IC chip to design a circuit in high efficiency.
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