| 摘要 |
PURPOSE:To manufacture a semiconductor device so as to stabilize the electric characteristics thereof by stabilizing the electrical connection, by protecting the exposed surface of a substrate with an intermediate film containing a high-melting point metal, thereby preventing an oxide film from being formed between the impurity diffusion region and the conductive layer. CONSTITUTION:When part of an oxide film 4 is removed by an etching or the like and a contact hole 4a is formed, the exposed surface of a Si substrate 1 is brought into contact with the oxygen in air, whereby a thin oxide film 6 naturally grows on the exposed substrate surface within the contact hole 4a. Then the substrate 1 is placed in a high-vacuum inert gas atmosphere of an Ar gas, and oxide film 6 is removed by a sputter etching. Thereafter, a suputter deposition is performed in an oxygen-free atmosphere thereby to form an inter-mediate film 7 of a film containing a high-melting point metal on the substrate 1. Whereupon, the exposed surface of the substrate 1 is protected by the film 7 so that it is not brought into contact with the oxygen in air, and also an oxide film does not naturally grow on the exposed surface. And, when the unecessary part of a polycrystalline Si layer 5 or the film 7 is removed by a photographic process and an etching process, the substrate 1 having an emitter contact part formed thereon is obtained.
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