发明名称 SEMICONDUCTOR JOSEPHSON ELEMENT COMPOSITE DEVICE
摘要 PURPOSE:To accelerate the operation speed of a semiconductor device while the high integration of the device is maintained by using a superconductive substance for the wirings of a multilayer for propagating a signal, and forming a Josephson element between the wirings to reduce the time constant of propagating the signal. CONSTITUTION:A PMOS 2 and an NMOS 3 are formed in an N-type semiconductor substrate 1. Holes are opened in the source or drain regions of the MOSes to connect them to an element by first layer signal propagating wirings 5, 6, 7, 14 made of a superconducting substance. The first layer wirings 15 made of said substance is formed simultaneously with the wirings 5, 6, 7, 14. Further, second layer signal wirings 8, 9, 10, 11 and the wirings 15 made of said substance are formed. An insulating film 12 is formed to be sufficiently thin to form a tunnel type Josephson element. Since the wirings 5, 6, 7, 14, 8, 9, 11 are formed of the substance, the time constant of propagating the signal is reduced to provide an accelerating effect.
申请公布号 JPS63276283(A) 申请公布日期 1988.11.14
申请号 JP19870110569 申请日期 1987.05.08
申请人 HITACHI LTD 发明人 NISHIO YOJI
分类号 H01L39/06;H01L21/3205;H01L23/52;H01L39/22 主分类号 H01L39/06
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