| 摘要 |
PURPOSE:To uniformly, highly efficiently, and simultaneously treat many substrates by forming a plasma region between a plasma gun and a counter anode, and a counter anode, and providing another heater at a vaporization source. CONSTITUTION:The anode 16 to be positively charged with respect to the plasma gun 20 is arranged on the side of a vacuum chamber 10 opposed to the plasma gun 20 provided on the side of the vacuum chamber 10, and a focusing coil 15 is arranged at the rear. The electron beam from the plasma gun 20 is diffused in the region shown by the broken line 14 and further focused on the anode 16, hence the introduced gas and the vapor from the vaporization source 12 are ionized in the region, and the wide and uniform plasma region is formed. The vaporization source 12 consisting of the electron beam melting device is arranged at the lower part of the vacuum chamber 10, and the evaporation rate can be independently adjusted. the particles evaporated from the vaporization source 12 are ionized in the plasma region or further react with the introduced gas, and deposited on the substrate on the substrate holder 13 negatively biased with respect to the vaporization source 12.
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