| 摘要 |
PURPOSE:To miniaturize an element without reducing a contact area, when an active region of the element, which is surrounded with an insulator, and a wiring material are electrically brought into contact, by making an area for opening a hole for obtaining a contact larger than the active region of the element. CONSTITUTION:An active region 101 of an element, which includes N- or P-type impurities of 1X 10<19>m<-3> or more, is formed on, e.g., a silicon single crystal on a semiconductor substrate 100. The four sides of the region 101 is surrounded with an insulating film 102 comprising a silicon film, a silicon nitride film, a polyimide film and the like. A hole is provided in an insulating film 105 comprising a silicon oxide film, a silicon nitride film, a polyimide resin and the like. A wiring material, which comprise polycrystalline silicon, Al, Cu and the like including impurities of phosphorus, boron and the like, is deposited. Thus the contact between the active region of the element and the wiring material is obtained. At this time, a region, where the hole is provided in the insulating film 105 is made larger than the active region of the element. In this way, the active region of the element can be used without useless areas, and the area of a chip can be reduced.
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