| 摘要 |
PURPOSE:To increase the capacitance of a grain boundary layer insulated type semiconductor capacitor and reduce the dispersion of capacitance by preparing SrTiO3 group raw material powder having excellent dispersibility in a submicron class and manufacturing a desired composition raw material by mixing through a mere dry method by using the powder. CONSTITUTION:Either of the mixed liquid of a proper quantity of at least one component except Sr and a proper quantity of an Sr solution or the mixed liquid of a proper quantity of at least one component except Ti and a proper quantity of a Ti solution is prepared, the mixed liquid and a precipitate forming liquid are mixed to form a co-precipitate, and the co-precipitate is dried and calcined at 600-1200 deg.C. A calcined body acquired and the compound of residual ingredients having an aimed composition are mixed, and calcined at 700-1300 deg.C and molded, or molded and calcined. A molded form obtained is baked in a reducing atmosphere at 1300-1600 deg.C, thus shaping a semiconductor element material. Accordingly, sintered body particles, which have large diameters and are arranged in monodispersion, can be acquired simply, thus increasing the capacitance of a grain boundary layer insulated type semiconductor capacitor and reducing the dispersion of capacitance thereof.
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