| 摘要 |
PURPOSE:To enable the effective forming of a polysilicon film doped with phosphorus good in its particle diameter, by using a vapor growth method to form an amorphous silicon film doped with phosphorus and next using heat treatment to perform polycrystallization. CONSTITUTION:A wafer is mounted on a wafer susceptor 19, and an infrared lamp 17 is used to heat the wafer, and a carrier gas and an inactive gas are supplied inside a reaction chamber 6 from gas supply ports 10 and 24. Next, a disilane gas and a phosphine gas are supplied from the gas supply port 10, and an amorphous silicon film doped with phosphorus is made to grow and formed on the wafer. Next the wafer is projected into a diffusion furnace and provided with heat treatment under a nitrogen atmosphere. Hence, a polysilicon film doped with phosphorus good in its particle diameter can be effectively formed.
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