发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a method, through which n-type and p-type-source drain regions are formed simultaneously, heat treatment is unnecessitated and the source-drain regions can be shaped finely with high accuracy, by diffusing impurities having conductivity types of a different kind at the same time from a solid impurity source and a gas impurity source or two solid impurity sources by applying a laser. CONSTITUTION:One conductivity type solid impurity source 10 is arranged onto one conductivity type impurity forming region, the other conductivity type impurity forming region is exposed into an atmosphere containing the other conductivity type impurity gas, and the whole surface is irradiated with a laser and impurities are diffused simultaneously from said solid impurity source 10 and a gas impurity source, thus shaping one conductivity type impurity regions 15 and the other conductivity type impurity regions 16. Or one conductivity type solid impurity sources 10 are disposed onto one conductivity type impurity forming region, and the other conductivity type solid impurity source 11 is arranged onto the other conductivity type impurity forming region, and the whole surface is irradiated with the laser and the impurities are diffused at the same time from said two solid impurity sources 10, 11, thus forming one conductivity type impurity regions 15 and the other conductivity type impurity regions 16. B2H6, etc., are used as said gas impurity source.
申请公布号 JPS63302518(A) 申请公布日期 1988.12.09
申请号 JP19870139393 申请日期 1987.06.02
申请人 FUJITSU LTD 发明人 TAKEI MICHIKO
分类号 H01L29/78;H01L21/22;H01L27/06 主分类号 H01L29/78
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