| 摘要 |
PURPOSE:To realize the employment of reference pin arrangement, by generating a required control signal automatically in the inside of a chip in a universal static memory (SRAM) in which a driving system to heighten radiation resistance is employed. CONSTITUTION:The titled circuit is constituted of two cross-coupled P-channel transistors Q11 and Q12 and two resistors R1 and R2, and the sources of the two transistors are connected to a power source, and the drain of the Q11 via the R1 and that of the Q12 via the R2 are connected to the ground, respectively. And at the time of applying the power source, the output of at least either complementary outputs being generated at the gates of both transistors Q11 and Q12 is set as the input of the control signal of an information conversion circuit. Thus, since the control signal required for a cell array system to improve a radiation ray resistant characteristic can be generated in the inside of the SRAM automatically, it is not required to provide a specific pin to input the control signal, thereby, the reference pin arrangement can be employed.
|
