| 摘要 |
PURPOSE:To prevent crystal defects in a single crystal semiconductor layer in an active region and to enable a high-speed and highly integrated semiconductor integrated circuit to be produced stably with a good yield, by forming an element isolating oxide film such that the tip ends of its bird's beaks are spaced from the active region. CONSTITUTION:A semiconductor integrated circuit has a transistor constructed such that electrodes of operating regions of the transistor is led out by a conducting film connected to at least one of the operating regions. An element isolating oxide film 16 is deposited around a projected active region of a single crystal semiconductor on which at least one of the operating regions of the transistor is provided, and the oxide film 16 has bird's beaks whose tip ends are spaced from the active region by a predetermined distance (d). Accordingly, the tip end of the bird's beak created during selective oxidation using this mask can be prevented from extending up to the corners of a groove. Thereby, concentration of stress due to the growth of the oxide film can be avoided and hence crystal defects can be prevented.
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