发明名称 THIN FILM FORMING DEVICE
摘要 PURPOSE:To stably supply the vapor and clusters of a material to be deposited by evaporation to a substrate by forming a crucible body to be used for the ICB method into a double construction, of which the outside consists of a conductive high melting point material and the inside consists of a high melting point material having high corrosion resistance. CONSTITUTION:The crucible body 26 in which the material 5 to be deposited by evaporation is packed for formation of a thin film on the substrate by the ICB method is made into the double construction consisting of an inside crucible 24 and an outside crucible 25. A cap 23 formed with a nozzle 4 is provided to the inside crucible 24 housing the material 5 to be deposited by evaporation and is constituted of a high melting point material such as tungsten, alumina, titanium nitride or silicon carbide to suppress the chemical reaction thereof with the material to be deposited by evaporation. The vapor and clusters of the material 5 to be deposited by evaporation are thereby stably supplied to the substrate and the reuse of the crucible body 26 is enabled.
申请公布号 JPS63307261(A) 申请公布日期 1988.12.14
申请号 JP19870139912 申请日期 1987.06.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 ITO HIROMOTO;MINOWA YOSHIFUMI;YAMAJI SHIGERU
分类号 C23C14/32 主分类号 C23C14/32
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