| 摘要 |
PURPOSE:To obtain a small-sized sensor having a high resistance and a high output and excellent accuracy by forming a second electrode so that voltage is applied to the second electrode and a first electrode so as to shape an inversion layer into a quadrilateral region formed onto an oxide film while being opposed to a quadrilateral region in a substrate. CONSTITUTION:Since voltage VG is applied between a second electrode 44 and a first electrode 43, an inversion layer is formed to a diaphragm 2 section oppositely faced to the second electrode 44, and substantially a shearing type gage is shaped. When stress by measuring pressure P is generated in the inversion layer section at that time, output voltage corresponding to measuring pressure P can be detected from a section between output lead layers 33 and 34. Consequently, voltage VG between the first electrode 43 and the second electrode 44 is adjusted, thus substantially acquiring the shearing type gage having high resistance and a high output and excellent sensibility. The dynamic resistance value of the shearing type gage can be changed by fluctuating electrode voltage, and the shearing type gage, which does not depend upon largely on the conditions of manufacturing processes such as the temperature, time, etc., of thermal diffusion, can be realized.
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