| 摘要 |
PURPOSE:To improve device reliability by a method wherein an electrode wiring is subjected to anisotropic etching and then to isotropic etching for the provision of an inclination on the upper portion of the electrode wiring. CONSTITUTION:An insulating film 2 is formed on the surface of a semiconductor substrate 1 and, on the insulating film 2, electrode wirings 3 and 4 are constructed by anisotropic etching. Inclinations are provided as required on the upper portions of the electrode wirings 3 and 4 in anisotropic etching process. The use of anisotropic etching for electrode wirings and isotropic etching for inclinations facilitates the very fine processing in a later stage, which enhances device reliability. The same technique may be employed in case of an electrode wiring film consisting of three or more layers.
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